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| MITSUBISHI IGBT MODULES CM200TU-12F HIGH POWER SWITCHING USE CM200TU-12F IC ................................................................... 200A VCES ............................................................ 600V Insulated Type 6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm CM N 11 21.7 E G P 11 E 21.7 G 11 14.4 E GuP EuP GvP EvP GwP EwP G G E G E G E GuN EuN GvN EvN GwN EwN 80 0.25 102 48.5 17 3.75 107 90 0.25 23 12 12 4-5.5 MOUNTING HOLES (4) U V W 12 5-M5NUTS Tc measured point 2.8 11 23 21.7 12 23 11 12 3.75 0.5 0.8 11 4 Tc measured point 29 -0.5 +1 21.7 7.1 8.1 P GUP RTC GVP RTC EVP GVN RTC EVN V GWP RTC EWP GWN RTC EWN W LABEL 26 EUP GUN U RTC EUN N CIRCUIT DIAGRAM Aug. 1999 MITSUBISHI IGBT MODULES CM200TU-12F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Conditions Ratings 600 20 200 400 200 400 590 -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 680 Unit V V A A W C C V N*m N*m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Test conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V VGE = VCES, VCE = 0V Tj = 25C IC = 200A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 300V, IC = 200A, VGE = 15V VCC = 300V, IC = 200A VGE1 = VGE2 = 15V RG = 3.1, Inductive load switching operation IE = 200A IE = 200A, VGE = 0V IGBT part (1/6 module) FWDi part (1/6 module) Case to fin, Thermal compoundapplied*2 (1/6 module) Tc measured point is just under the chips Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 3.1 Limits Typ. -- 6 -- 1.6 1.6 -- -- -- 1240 -- -- -- -- -- 3.8 -- -- -- 0.09 -- -- Max. 1 7 20 2.2 -- 54 3.6 2.0 -- 120 100 350 250 150 -- 2.6 0.21 0.35 -- 0.15V3 31 Unit mA V A V nF nC ns ns C V C/W Contact thermal resistance Thermal resistance External gate resistance Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : If you use this value, Rth(f-a) should be measured just under the chips. Aug. 1999 MITSUBISHI IGBT MODULES CM200TU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3 VGE = 15V 2.5 2 1.5 1 0.5 0 Tj = 25C Tj = 125C 0 100 200 300 400 400 COLLECTOR CURRENT IC (A) Tj=25C 350 300 250 200 150 100 50 7.5 0 0 0.5 1 1.5 2 8 VGE=20V 15 11 10 9.5 9 8.5 2.5 3 3.5 4 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 5 5 Tj = 25C EMITTER CURRENT IE (A) Tj = 25C 4 3 2 102 7 5 3 2 3 IC = 400A IC = 200A IC = 80A 2 101 7 5 3 2 1 0 6 8 10 12 14 16 18 20 100 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 Cies SWITCHING TIMES (ns) td(off) tf td(on) 101 7 5 3 2 102 7 5 3 2 Coes Cres VGE = 0V 100 7 5 3 2 101 7 5 3 2 tr Conditions: VCC = 300V VGE = 15V RG = 3.1 Tj = 125C 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 COLLECTOR CURRENT IC (A) Aug. 1999 MITSUBISHI IGBT MODULES CM200TU-12F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 7 5 3 2 trr Irr NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (C/W) 102 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j-c) = 0.21C/ W 3 FWDi part: 2 Per unit base = Rth(j-c) = 0.35C/ W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 101 7 5 3 2 Conditions: VCC = 300V VGE = 15V RG = 3.1 Tj = 25C 2 3 5 7 102 2 3 5 7 103 10-1 10-1 7 5 3 2 7 5 3 2 10-2 Single Pulse TC = 25C 10-2 100 1 10 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TMIE (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 IC = 200A VCC = 200V VCC = 300V 0 200 600 1000 1400 1800 GATE CHARGE QG (nC) Aug. 1999 |
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